? 2003 ixys all rights reserved symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a 250 v v gs(th) v ds = v gs , i d = 250 a 2.0 4.0 v i gss v gs = 20 v dc, v ds = 0 100 na i dss v ds = v dss 25 a v gs = 0 v t j = 125c 250 a r ds(on) v gs = 10 v, i d = 15a 60 72 m ? pulse test, t 300 ms, duty cycle d 2% ds98954b(08/03) standard power mosfet n-channel enhancement mode symbol test conditions maximum ratings v dss t j = 25c to 150c 250 v v dgr t j = 25c to 150c; r gs = 1.0 m ? 250 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c mosfet chip capability 41 a i dm t c = 25 c, pulse width limited by t jm 164 a i ar 41 a e ar t c = 25 c30mj e as t c = 25 c 1.0 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 5 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 300 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c m d mounting torque 1.13/10 nm/lb.in. weight to-264 6 g to-247 ad g = gate d = drain s = source tab = drain ixth 41n25 v dss = 250 v i d(cont) = 41 a r ds(on) = 72m ? ? ? ? ? maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s 300 c g d s d (tab) features ? low r ds (on) hdmos tm process rugged polysilicon gate cell structure international standard package jedec to-247 ad fast switching times high commutating dv/dt rating applications motor controls dc choppers switched-mode and resonant-mode power supplies uninterruptible power supplies (ups) advantages easy to mount with one screw (isolated mounting screw hole) space savings high power density preliminary data sheet
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 , pulse test 20 28 s c iss 3200 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 510 pf c rss 180 pf t d(on) 19 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 19 ns t d(off) r g = 3.6 ? (external) 79 ns t f 17 ns q g(on) 110 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 18 nc q gd 48 nc r thjc 0.42 k/w r thck 0.25 k/w source-drain diode ratings and characteristics (t j = 25c unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0v 41 a i sm repetitive; pulse width limited by t jm 164 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 0.5 i s , -di/dt = 100 a/s, v r = 100v 300 ns q rr 3.0 c ixth 41n25 to-247 ad outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc terminals: 1 - gate 2 - drain 3 - source tab - drain 1 2 3
? 2003 ixys all rights reserved ixth 41n25 fig. 2. extended output characteristics @ 25 deg. c 0 20 40 60 80 10 0 12 0 0 4 8 12 16 2 0 v ds - volts i d - amperes v g s = 1 0v 9v 8v 5v 6v 7v fig. 3. output characteristics @ 125 deg. c 0 5 10 15 20 25 30 35 40 45 0 12345678 v ds - volts i d - amperes v g s = 1 0v 9v 8v 7v 5v 6v fig. 1. output characteristics @ 25 deg. c 0 5 10 15 20 25 30 35 40 45 0 0.5 1 1.5 2 2.5 3 3.5 4 v ds - volts i d - amperes v g s = 1 0v 9v 8v 7v 5v 6v fig. 4. r ds(on) normalized to i d25 value vs. junction temperature 0.4 0.7 1 1. 3 1. 6 1. 9 2.2 2.5 2.8 -50 -25 0 25 50 75 100 125 150 t j - degr ees centigr ade r d s (on) - normalize d i d = 41 a i d = 20.5a v g s = 1 0v fig. 6. drain current vs. case t emperature 0 6 12 18 24 30 36 42 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) normalized to i d25 value vs. i d 0.5 1 1. 5 2 2.5 3 3.5 4 0 20406080100120 i d - amperes r d s (on) - normalize d t j = 1 25oc t j = 25oc v g s = 1 0v
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 ixth 41n25 fig. 11. capacitance 10 0 10 0 0 10000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - p f c iss c oss c rss f = 1 m hz fig. 10. gate charge 0 2 4 6 8 10 020406080100120 q g - nanocoulombs v g s - volts v d s = 1 25v i d = 20.5a i g = 1 0ma fig. 7. input admittance 0 10 20 30 40 50 60 70 80 33.5 44.5 55.5 66.5 7 v gs - volts i d - amperes t j = 1 25oc 25oc -40oc fig. 12. maximum t ransient t hermal resistance 0.01 0.1 1 1 10 100 1000 pulse width - milliseconds r (th) jc - (oc/w) fig. 8. transconductance 0 10 20 30 40 50 60 0 20406080100120140 i d - amperes g f s - siemens t j = -40oc 25oc 1 25oc fig. 9. source current vs. source-to-drain voltage 0 20 40 60 80 10 0 12 0 0.4 0.6 0.8 1 1.2 1.4 v sd - volts i s - amperes t j = 1 25oc t j = 25oc
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